Conduction type change with annealing in thin silicon-on-insulator wafers

Solid-State Electronics

Volumn 48, Issue 7, 2004, Pages 1249-1252

  Shibata, Yoshitake ^a   Ichimura, Masaya ^a   Arai, Eisuke ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Annealing; Carrier concentration; New donor; Silicon on insulator; Spreading resistance measurement

Indexed keywords

ANNEALING; BAND STRUCTURE; CARRIER CONCENTRATION; CURRENT VOLTAGE CHARACTERISTICS; DATABASE SYSTEMS; ELECTRIC RESISTANCE MEASUREMENT; ESTIMATION; HALL EFFECT; ION IMPLANTATION; SILICON WAFERS; THERMAL EFFECTS;

NEW DONORS; SPREADING RESISTANCE MEASUREMENT;

SILICON ON INSULATOR TECHNOLOGY;

EID: 1842843650     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2003.11.002     Document Type: Article

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