Tunnel magnetoresistance effect in Co/BN nanotubes/Co junctions

Synthetic Metals

Volumn 135-136, Issue , 2003, Pages 745-746

  Kokado, Satoshi ^a   Harigaya, Kikuo ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Greens function method; Magnetotransport

Indexed keywords

CARBON NANOTUBES; ELECTRODES; FERROMAGNETISM; GREEN'S FUNCTION; MAGNETORESISTANCE; MAGNETS; POLARIZATION; SEMICONDUCTOR JUNCTIONS;

INSULATIING WIRE; MAGNETOTRANSPORT; SPIN-POLARIZED JUNCTIONS; TUNNEL BARRIERS;

NANOSTRUCTURED MATERIALS;

EID: 1842793977     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0379-6779(02)00829-9     Document Type: Conference Paper

References (8)

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7. 2 is approximately obtained on condition that transfer integral between electrode and wire is smaller than that in those.
8. By putting t as -2.0 eV, we can obtain the energy gap of about 4.0 eV, which is close to that obtained by the band calculation [4].