Defects in neutron transmutation doped silicon studied by positron annihilation lifetime measurements

Journal of Applied Physics

Volumn 87, Issue 8, 2000, Pages 3674-3677

  Coeck, M ^a   Balcaen, N ^b   Van Hoecke, T ^b   Van Waeyenberge, B ^b   Segers, D ^b   Dauwe, C ^b   Laermans, C ^c  

^a BELGIAN NUCLEAR RESEARCH CENTRE   (Belgium)

^b GHENT UNIVERSITY   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 1842697598     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.372398     Document Type: Article

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