Microwave Heated Reaction-Bonded Silicon Nitride Using an Inverse Temperature Gradient

Metals and Materials International

Volumn 9, Issue 2, 2003, Pages 187-191

  Fisher, J G ^a   Bai, K ^a   Woo, S K ^a   Han, I S ^a   Lee, K S ^a   Hong, K S ^a   Seo, D W ^a  

^a Korea Institute of Energy Research (KIER)   (South Korea)

Author keywords

Gel casting; Microwave processing; Reaction bonding; Si3N4; Temperature gradient

Indexed keywords

ALUMINUM NITRIDE; BONDING; MICROWAVES; NITRIDATION; PREFORMING; SILICON NITRIDE; SINTERING; THERMAL GRADIENTS;

AQUEOUS GEL-CASTING; GEL CASTING; LOW TEMPERATURES; MICROWAVE PROCESSING; REACTION BONDING; REACTION-BONDED SILICON NITRIDES; SI3N4; SOLIDS LOADING;

MICROWAVE HEATING;

EID: 1842577581     PISSN: 15989623     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF03027276     Document Type: Article

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