Intralayer backscattering in narrow GaAs/AlxGa1-xAs/GaAs bilayer channels

Physical Review B - Condensed Matter and Materials Physics

Volumn 69, Issue 8, 2004, Pages

  Yusa, G ^a   Muraki, K ^a   Saku, T ^b   Hirayama, Y ^a,c  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^b NTT Advanced Technology Corporation   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM DERIVATIVE; ARSENIC DERIVATIVE; GALLIUM;

ARTICLE; BILAYER MEMBRANE; ELECTRIC POTENTIAL; ELECTRON; MAGNETISM; QUANTUM MECHANICS; SURFACE CHARGE;

EID: 1842511474     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.69.085323     Document Type: Article

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