Towards large area simulation of E-beam lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5256, Issue 1, 2003, Pages 695-700

  Bohn, Martin ^a   Hermann, Uli ^a   Hoppe, Wolfgang ^a   Progler, Chris ^b   Ryzhoukhin, Michael ^a  

^a SIGMA C   (Germany)

^b PHOTRONICS INC   (United States)

Author keywords

Direct write; E beam lithography; Lithography modeling; Mask making

Indexed keywords

DIRECT WRITE; E-BEAM LITHOGRAPHY; LITHOGRAPHY MODELING; MASK MAKING; OPTICAL PROXIMITY EFFECT CORRECTION (OPC);

COMPUTER SIMULATION; ELECTRON SCATTERING; LITHOGRAPHY; MASKS; MATHEMATICAL MODELS; OPTIMIZATION; PHOTORESISTS; PROCESS CONTROL; QUALITY CONTROL; SIMULATORS;

ELECTRON BEAMS;

EID: 1842474955     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)

1. M.Parikh: Proximity correction for raster scan electron lithography machine, J.Vac.Sci.Technol., 19(4) Nov./Dec. 1981
2. M.Parikh: Corrections to proximity effects in E-beam lithography I, J.Appl. Phys. 50 (6), June 1979