Second Level Imaging of Advanced Alternating Phase Shift Masks Using E-Beam Lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5256, Issue 2, 2003, Pages 1034-1044

  Leibold, Bernd ^a   Butschke, Joerg ^a   Bettin, Lutz ^b   Beyer, Dirk ^b   Irmscher, Mathias ^a   Koepernik, Corinna ^a   Plontke, Rainer ^b   Vix, Armelle ^c   Voehringer, Peter ^a  

^a Institut fur Mikroelektronik Stuttgart   (Germany)

^b Vistec Electron Beam GmbH   (Germany)

^c INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

Alternating Phase Shift Mask; Chemically Amplified Resists; Conductive top coat; E Beam; ESPACER; Second Level Imaging

Indexed keywords

AMPLIFICATION; ELECTRON BEAMS; IMAGING TECHNIQUES; PHASE SHIFT; PHOTORESISTS;

ELECTRON (E)-BEAM LITHOGRAPHY;

MASKS;

EID: 1842422460     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.518037     Document Type: Conference Paper

References (4)

1. M. Irmscher, D. Beyer, J. Butschke, C. Constantine, T. Hoffmann, C. Koepernik, C. Krauss, B. Leibold, F. Letzkus, D. Mueller, R. Springer, P. Voehringer, "Comparative evaluation of e-beam sensitive chemically amplified resists for mask making", Photomask Japan 2002, Yokohama, Japan, April 23 -25, 2002.
2. D. Beyer, D. Löffelmacher, G. Goedl, P. Hudek, B. Schnabel, T. Elster, "Tool and process optimization for 100nm maskmaking using a 50kV variable shaped e-beam system", BACUS Conference, Monterey, CA, USA, Oct 2 - 5, 2001.
3. H. Tomozawa, Y. Saida, Y. Ikenoue, F. Murai, Y. Suzuki, T. Tawa and Y Ohita, J Photopolym. Sci. Technol., Vol 9, No.4, 707 (1996)
4. M. Angelopoulos, IBM J. Res & Dev., Vol 45 ,No.1, Jan. 2001