Laser induced nucleation and growth of polycrystalline silicon

Journal of Non-Crystalline Solids

Volumn 198-200, Issue PART 2, 1996, Pages 887-890

  Toet, D ^a   Eitel, S ^b   Santos, P V ^a   Heintze, M ^b  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^b UNIVERSITY OF STUTTGART   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; CRYSTALLIZATION; LASER APPLICATIONS; NUCLEATION; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

LASER CRYSTALLIZATION; POINT LIKE POLYCRYSTALLINE NUCLEATION SEEDS; SUBSEQUENT LATERAL GROWTH; THERMAL CRYSTALLIZATION;

SEMICONDUCTING FILMS;

EID: 18344413270     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-3093(96)00076-2     Document Type: Article

References (9)

1. T. Matsuyama, M. Tanaka, S. Tsuda, S. Nakano and Y. Kuwano, Jpn. J. Appl. Phys. 32 (1993) 3720.
2. T. Sameshima, M. Hara and S. Usui, Jpn, J. Appl. Phys. 28 (1989) 1789.
3. K. Yamagata and T. Yonehara, Mater. Res. Soc. Symp. Proc. 164 (1990) 365.
4. J.R. Heath, S.M. Gates and C.A. Chess, Appl. Phys. Lett. 64 (1994) 3569.
5. M. Heintze, P.V. Santos, C.E. Nebel and M. Stutzmann, Appl. Phys. Lett. 64 (1994) 3148.
6. T. Matsuyama, M. Nishikuni, M. Kameda, S. Okamoto, M. Tanaka, S. Tsuda, M. Ohnishi, S. Nakano and Y. Kuwano, Mater. Res. Soc. Symp. Proc. 164 (1990) 329.
7. H. Richter, Z. Wang and L. Ley, Solid State Commun. 39 (1981) 625.
8. I.H. Campbell, P.M. Fauchet and F. Adar, Mater. Res. Soc. Symp. Proc. 53 (1986) 311.
9. F. Cerdeira, T.A. Fjeldly and M. Cardona, Phys. Rev. B 8 (1973) 4734.