Piezoelectric properties of Nb-doped Bi4Ti3O12 ferroelectric ceramics

Key Engineering Materials

Volumn 228-229, Issue , 2002, Pages 27-30

  Nagata, Hajime ^a   Yano, Yuzuru ^a   Takeda, Gentaro ^a   Takenaka, Tadashi ^a  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

Bi4Ti3O12; Bismuth Layer Structured Ferroelectrics; D E Hysteresis Loop; Electromechanical Coupling Factor; Grain Orientation

Indexed keywords

BISMUTH COMPOUNDS; DOPING (ADDITIVES); ELECTROMECHANICAL DEVICES; GRAIN GROWTH; NIOBIUM; PIEZOELECTRIC DEVICES;

HOT-FORGING (HF) METHOD;

FERROELECTRIC CERAMICS;

EID: 18344407973     PISSN: 10139826     EISSN: 16629795     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

References (6)

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5. H.S. Shulman, M. Testorf, D. Damjanovic and N. Setter, "Microstructure, Electrical Conductivity, and Piezoelectric Properties of Bismuth Titanate", J. Am. Ceram. Soc., 79 [12] (1996), p. 3124.
6. F.K. Lotgering, J. Inorg. Nucl. Chem., 9 (1959), p. 113.