An advanced self-aligned BiCMOS technology for high performance 1-megabit ECL I/O SRAM's

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1989, Pages 421-424

  Burger, W R ^a   Lage, C ^a   Davies, T ^a   DeLong, M ^a   Haueisen, D ^a   Small, J ^a   Huglin, G ^a   Landau, B ^a   Whitwer, F ^a   Bastani, B ^a  

^a NATIONAL SEMICONDUCTOR CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS, CMOS; LOGIC CIRCUITS, EMITTER COUPLED; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES, MOS;

1-MEGABIT ECL; MOS GATE DELAYS; OXIDE ISOLATION; SELF-ALIGNED BICMOS; SILICIDED POLYSILICON; SRAM;

DATA STORAGE, DIGITAL;

EID: 18344407261     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)