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Volumn 175-176, Issue , 2001, Pages 146-156
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Unusual growth phenomena of group III and group V elements on Si(1 1 1) and Ge(1 1 1) surfaces
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Author keywords
Epitaxy; Ge; Growth; P; Scanning tunnelling microscopy; Si; Tl
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Indexed keywords
ADSORPTION;
EPITAXIAL GROWTH;
PHOSPHORUS;
SCANNING TUNNELING MICROSCOPY;
SEMICONDUCTING GERMANIUM;
SEMICONDUCTING SILICON;
SURFACE STRUCTURE;
THALLIUM;
SURFACE POTENTIAL;
SURFACE RECONSTRUCTION;
SEMICONDUCTOR GROWTH;
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EID: 18344405161
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/S0169-4332(01)00028-9 Document Type: Article |
Times cited : (23)
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References (26)
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