A novel 0.79μm2 SRAM cell by KrF lithography and high performance 90 nm CMOS technology for ultra high speed SRAM

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2002, Pages 419-422

  Jung, Soon Moon ^a   Kwon, Hyungshin ^a   Jeong, Jaehun ^a   Cho, Wonseok ^a   Kim, Sungbong ^a   Lim, Hoon ^a   Koh, Kwangok ^a   Rah, Youngseop ^a   Park, Jaekyun ^a   Kang, Heesoo ^a   Lyu, Gyuho ^a   Park, Joonbum ^a   Chang, Chulsoon ^a   Jang, Youngchul ^a   Park, Donggun ^a   Kim, Kinam ^a   Lee, Moon Yong ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC BREAKDOWN; GATES (TRANSISTOR); LITHOGRAPHY; NEUTRONS; OXIDES; SCANNING ELECTRON MICROSCOPY; STATIC RANDOM ACCESS STORAGE;

ULTRA HIGH-SPEED MEMORY;

CMOS INTEGRATED CIRCUITS;

EID: 18344403088     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. S.B. Kim et al., IEDM Tech. Digest, p. 253, 2001
2. K.Tomita et al, VLSI Tech. Digest, p14, 2002
3. Thomas Schafbauer et al, VLSI Tech. Digest, p62, 2002
4. Y. Takao et al, VLSI Tech. Digest, p122, 2002