Metal-organic chemical vapor deposition and characterization of strontium bismuth tantalate (SBT) thin films

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 9 B, 2000, Pages 5485-5488

  Burgess, Darren ^a   Schienle, Frank ^a   Lindner, Johannes ^a   Schumacher, Marcus ^a   Juergensen, Holger ^a   Solayappan, Narayan ^b   Mcmillan, Larry ^b   Paz De Araujo, Carlos ^b   Uchiyama, Kiyoshi ^c   Otsuki, Tatsuo ^c  

^a AIXTRON AG   (Germany)

^b Symetrix Corporation   (United States)

^c Panasonic Corporation of North America   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; CURRENT DENSITY; ELECTRIC PROPERTIES; FERROELECTRIC THIN FILMS; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NONVOLATILE STORAGE; STOICHIOMETRY; THICKNESS MEASUREMENT;

LIQUID DELIVERY SYSTEM; NONVOLATILE MEMORY; STRONTIUM BISMUTH TANTALATE THIN FILMS;

STRONTIUM COMPOUNDS;

EID: 18344400831     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.5485     Document Type: Article

References (4)

1. C. A. Paz de Araujo, J. D. Cuchiaro, L. D. McMillan, M. C. Scott and J. F. Scott: Nature 374 (1995) 627.
2. AIXTRON TriJet is a trademark of AIXTRON AG, Kackstr. 15-17, D52072 Aachen, GERMANY.
3. AIXTRON Tricent is a registered trademark of AIXTRON AG, Kackstr. 15-17, D52072 Aachen, GERMANY.
4. J. Lindner, F. Weiss, J. P. Senateur, W. Haessler, G. Köbernik, S. Oswald, A. Figueras and J. Santiso: to be published in Int. Symp. Integr. Ferroelectr. (ISIF), Aachen (2000).