Enhancement of emission intensity in β-Ga2O3 phosphors due to oxysulfide formation

Journal of Materials Science Letters

Volumn 20, Issue 24, 2001, Pages 2211-2212

  Kim, J S ^a   Lee, S B ^a   Sue, S H ^a   Kang, H I ^a   Lee, M ^a   Bahng, J H ^a   Choi, J C ^a   Park, H I ^a   Mho, S I ^b   Kim, T W ^c   Whang, Y H ^d   Chang, J H ^e   Moon, B K ^e   Kim, G C ^f   Moon, J W ^a   Moon, H S ^a  

^a Yonsei University   (South Korea)

^b Ajou University   (South Korea)

^c Kwangwoon University   (South Korea)

^d Pusan National University   (South Korea)

^e Pukyong National University   (South Korea)

^f Korea University of Technology and Education   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; COMPOSITION; LIGHT EMISSION; PHOSPHORS; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

EMISSION INTENSITY; GALLIUM SESQUIOXIDE; OXYSULFIDE FORMATION;

GALLIUM COMPOUNDS;

EID: 18344377334     PISSN: 02618028     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1017937101848     Document Type: Article

References (12)