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Volumn 11, Issue 3, 2005, Pages 27-28
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Migration-enhanced MOCVD advances AlGaN performance
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Author keywords
[No Author keywords available]
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Indexed keywords
DISLOCATION DENSITY;
MIGRATION-ENHANCED (ME) MOCVD;
SENSOR ELECTRONIC TECHNOLOGY (CO);
TRIMETHYLALUMINUM (TMA);
ALUMINUM NITRIDE;
AMMONIA;
BOUNDARY LAYERS;
DEFECTS;
EPITAXIAL GROWTH;
FILM GROWTH;
LIGHT EMITTING DIODES;
MOLECULAR BEAM EPITAXY;
REACTION KINETICS;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SENSORS;
TRANSMISSION ELECTRON MICROSCOPY;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
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EID: 18344368222
PISSN: 1096598X
EISSN: None
Source Type: Trade Journal
DOI: None Document Type: Review |
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Times cited : (2)
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References (0)
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