Oxidation of clean silicon surfaces studied by four-point probe surface conductance measurements

Surface Science

Volumn 377-379, Issue , 1997, Pages 676-680

  Petersen, C L ^a   Grey, F ^a   Aono, M ^b,c  

^a TECHNICAL UNIVERSITY OF DENMARK   (Denmark)

^b OSAKA UNIVERSITY   (Japan)

^c INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

Author keywords

Adsorption kinetics; Oxidation; Silicon; Surface electrical transport

Indexed keywords

ELECTRIC CONDUCTIVITY MEASUREMENT; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRON TRANSPORT PROPERTIES; GAS ADSORPTION; MONOLAYERS; OXIDATION; REACTION KINETICS; SURFACE PHENOMENA; SURFACE ROUGHNESS;

FOUR POINT PROBE SURFACE CONDUCTANCE MEASUREMENTS;

SEMICONDUCTING SILICON;

EID: 18244429829     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(96)01470-7     Document Type: Article

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