W-polycide dual-gate structure for sub- 1/4 micron low-voltage CMOS technology

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1995, Pages 893-896

  Bevk, J ^a   Georgiou, G E ^a   Frei, M ^a   Silverman, P J ^a   Lloyd, E J ^a   Kim, Y ^a   Luftman, H ^a   Furtsch, M ^a   Schiml, T ^a   Hillenius, S J ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; DIFFUSION; GATES (TRANSISTOR); HEAT TREATMENT; LEAKAGE CURRENTS; MOS DEVICES; NITROGEN; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; TUNGSTEN COMPOUNDS;

IMPLANTING DOPANTS; IN SITU GATE DOPING; LOW GATE SHEET RESISTANCE; THRESHOLD VOLTAGE; TUNGSTEN SILICIDE;

CMOS INTEGRATED CIRCUITS;

EID: 18244424120     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)