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Volumn 148-149, Issue , 1997, Pages 48-102
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Point defect behaviour resulting from dopant diffusions in Silicon
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Author keywords
Diffusion; Dopant; Impurity Diffusion; Microdefect; Oxidation Stacking Fault; Point Defect; Self Diffusion; Semiconductor; Silicon; Swirl Defect; Vacancy Self Interstitial
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Indexed keywords
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EID: 18244421635
PISSN: 10120386
EISSN: 16629507
Source Type: Journal
DOI: 10.4028/www.scientific.net/ddf.148-149.48 Document Type: Article |
Times cited : (2)
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References (55)
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