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Volumn 148-149, Issue , 1997, Pages 48-102

Point defect behaviour resulting from dopant diffusions in Silicon

Author keywords

Diffusion; Dopant; Impurity Diffusion; Microdefect; Oxidation Stacking Fault; Point Defect; Self Diffusion; Semiconductor; Silicon; Swirl Defect; Vacancy Self Interstitial

Indexed keywords


EID: 18244421635     PISSN: 10120386     EISSN: 16629507     Source Type: Journal    
DOI: 10.4028/www.scientific.net/ddf.148-149.48     Document Type: Article
Times cited : (2)

References (55)
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  • 23
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    • Damask, A.C.1    Dienes, G.J.2
  • 43
    • 33751134359 scopus 로고
    • edited by H. R Huff, R J. Kriegler and Y. Takeishi Electrochemical Society, Pennington
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    • Antoniadis, D.A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.