Ellipsometric analysis of CdZnTe preparation for HgCdTe MBE growth

Journal of Crystal Growth

Volumn 175-176, Issue PART 1, 1997, Pages 659-664

  Benson, J D ^a   Cornfeld, A B ^a   Martinka, M ^a   Dinan, J H ^a   Johs, B ^a   He, P ^a   Woollam, John A ^a  

^a NIGHT VISION AND ELECTRONIC SENSORS DIRECTORATE   (United States)

Author keywords

Molecular beam epitaxy; Spectroscopic ellipsometry

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; ELLIPSOMETRY; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SUBSTRATES; TEMPERATURE MEASUREMENT;

CADMIUM ZINC TELLURIDE; MERCURY CADMIUM TELLURIDE; SPECTROSCOPIC ELLIPSOMETRY;

SEMICONDUCTING CADMIUM COMPOUNDS;

EID: 18144452458     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)01214-6     Document Type: Article

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