Stress study of 1.5 μm emission in Si : Er and GaAs : Er

Journal of Luminescence

Volumn 72-74, Issue , 1997, Pages 110-111

  Leitao J P ^a   Carmo, M C ^a   Henry, M O ^b  

^a UNIVERSITY OF AVEIRO   (Portugal)

^b DUBLIN CITY UNIVERSITY   (Ireland)

Author keywords

Er; Gaas; Si; Stress

Indexed keywords

CRYSTALS; DOPING (ADDITIVES); ERBIUM; ION IMPLANTATION; OXYGEN; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; STRESSES;

CODOPING; UNIAXIAL STRESS;

LIGHT EMISSION;

EID: 18144445815     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-2313(97)00296-2     Document Type: Article

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