Metallization onset in K/Si(100)-(2 × 1)

Surface Science

Volumn 377-379, Issue , 1997, Pages 220-224

  Segovia, P ^a   Castro, G R ^a   Mascaraque, A ^a   Michel, E G ^a  

^a INSTITUTO NICOLÁS CABRERA   (Spain)

Author keywords

Alkali metals; Angle resolved photoemission; Interface states; Metal semiconductor interfaces; Photoelectron emission; Schottky barrier; Semiconducting surfaces; Silicon; Single crystal epitaxy; Vicinal single crystal surfaces

Indexed keywords

BAND STRUCTURE; BINDING ENERGY; EPITAXIAL GROWTH; INTERFACES (MATERIALS); METALLIZING; PHASE TRANSITIONS; PHOTOEMISSION; POTASSIUM; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON; SINGLE CRYSTALS;

ANGLE RESOLVED PHOTOEMISSION;

SEMICONDUCTOR METAL BOUNDARIES;

EID: 18144433427     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(96)01359-3     Document Type: Article

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