Influence of interfacial reactivity on band offsets in ZnSe/GaAs superlattices

Materials Science in Semiconductor Processing

Volumn 8, Issue 4, 2005, Pages 472-475

  Ekpunobi, A J ^a  

^a NNAMDI AZIKIWE UNIVERSITY   (Nigeria)

Author keywords

Band offsets; Interfacial reactivity; Rehybridization

Indexed keywords

BINDING ENERGY; HETEROJUNCTIONS; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; MONOLAYERS; PHOTOEMISSION; RAMAN SCATTERING; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE CHEMISTRY; TRANSMISSION ELECTRON MICROSCOPY; ZINC COMPOUNDS;

BAND OFFSETS; INTERFACIAL REACTIVITY; REHYBRIDIZATION; VALENCE BAND OFFSETS;

SUPERLATTICES;

EID: 18144375272     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2004.07.007     Document Type: Article

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