The role and suppression of carrier leakage in 1.5 μm GaInNAsSb/GaAs Lasers

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2004, Pages 158-159

  Bank, S R ^a   Wistey, M A ^a   Yuen, H B ^a   Goddard, L L ^a   Harris, J S ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER RECOMBINATION; CARRIER LEAKAGE; THERMOIONIC ESCAPE TIME; TRAP DENSITY;

BAND STRUCTURE; CURRENT DENSITY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MOLECULAR BEAM EPITAXY; PROBABILITY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; STRAIN; THERMIONIC EMISSION;

QUANTUM WELL LASERS;

EID: 18044387785     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2004.1367835     Document Type: Conference Paper

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