Activation of shallow boron acceptor in CB coimplanted silicon carbide: A theoretical study

Applied Physics Letters

Volumn 86, Issue 10, 2005, Pages 1-3

  Gali, A ^a   Hornos, T ^a   Deak P ^a   Son, N T ^b   Janzn E ^b   Choyke, W J ^c  

^a BUDAPEST UNIVERSITY OF TECHNOLOGY AND ECONOMICS   (Hungary)

^b LINKÖPING UNIVERSITY   (Sweden)

^c UNIVERSITY OF PITTSBURGH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ANALYSIS; CARBON; DATA REDUCTION; RESONANCE; SEMICONDUCTOR MATERIALS; SILICON CARBIDE; SPECTROSCOPIC ANALYSIS; STOICHIOMETRY;

BAND GAP; BISTABLE DEFECTS; COIMPLANTATION; INTERSTITALS;

BORON;

EID: 18044384226     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1883745     Document Type: Article

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