Hydrogen-adsorption induced atomic rearrangement of a Pb monolayer on Si(111)

Physical Review Letters

Volumn 94, Issue 4, 2005, Pages

  Hwang, Ing Shouh ^a   Chang, Shih Hsin ^a   Fang, Chung Kai ^a,b   Chen, Lih Juann ^b   Tsong, Tien T ^a  

^a INSTITUTE OF PHYSICS   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC REARRANGEMENT; COMPLEX INTERFERENCE SUPERSTRUCTURES; HYDROGEN ATOMS; PHASE BOUNDARY;

ADSORPTION; BOUNDARY CONDITIONS; FLOW INTERACTIONS; HYDROGEN; MONOLAYERS; PATTERN RECOGNITION; PHASE TRANSITIONS; SCANNING TUNNELING MICROSCOPY; SILICON;

LEAD;

EID: 18044379547     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.94.045505     Document Type: Article

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35. 2 does not produce any defect on monolayer Pb-cover Si(111) surface.