Intrinsic vacancy-induced nanoscale wire structure in heteroepitaxial Ga 2Se 3/Si(001)

Physical Review Letters

Volumn 94, Issue 11, 2005, Pages

  Ohta, Taisuke ^a,c   Schmidt, D A ^b   Meng, Shuang ^b,d   Klust, A ^b,e   Bostwick, A ^b   Yu, Q ^b   Olmstead, Marjorie A ^b   Ohuchi, F S ^a  

^a University of Washington   (United States)

^b UNIVERSITY OF WASHINGTON   (United States)

^c LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^d MICRON TECHNOLOGY INC   (United States)

^e Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GROWTH ANISOTROPY; GROWTH MORPHOLOGY; STRUCTURAL VACANCIES; SUBSTRATE TEMPERATURE;

ANISOTROPY; BAND STRUCTURE; CRYSTAL ORIENTATION; EMISSION SPECTROSCOPY; EPITAXIAL GROWTH; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; SYNCHROTRON RADIATION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 18044366194     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.94.116102     Document Type: Article

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