Current-dependent positive magnetoresistance in Ga-doped La0.5Ca0.5MnO3

Chinese Physics

Volumn 10, Issue 8, 2001, Pages 751-755

  Chen, Xin ^a,b   Wang, Zhi Hong ^b   Li, Run Wei ^b   Shen, Bao Gen ^b   Zhao, Hong Wu ^b   Zhan, Wen Shan ^b   Chen, Jin Song ^a   Zhang, Xi Xiang ^c  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b INSTITUTE OF PHYSICS   (China)

^c HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

Magnetoresistance; Manganese oxide; Spin dependent tunnelling

Indexed keywords

ANTIFERROMAGNETIC MATERIALS; DOPING (ADDITIVES); ELECTRON TUNNELING; FERROMAGNETIC MATERIALS; GALLIUM; MAGNETIC PROPERTIES; MAGNETORESISTANCE; TRANSPORT PROPERTIES;

ANTIFERROMAGNETIC MATRIX; FERROMAGNETIC CLUSTERS; MANGANESE OXIDE; SPIN-DEPENDENT TUNNELLING;

LANTHANUM COMPOUNDS;

EID: 18044363642     PISSN: 10091963     EISSN: None     Source Type: Journal    
DOI: 10.1088/1009-1963/10/8/317     Document Type: Article

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