40 GHz actively mode-locked DBR laser diodes with a wide (800 MHz) locking range

Conference on Optical Fiber Communication, Technical Digest Series

Volumn 54, Issue 3, 2001, Pages

  Katoh, Y ^a   Arahira, S ^a   Ogawa, Y ^a  

^a OKI ELECTRIC INDUSTRY CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED OPTOELECTRONICS; LASER MODE LOCKING; LASER PULSES; LASER TUNING; LIGHT MODULATORS; MIRRORS; MONOLITHIC INTEGRATED CIRCUITS; OPTICAL FILMS; OPTICAL WAVEGUIDES; SECOND HARMONIC GENERATION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

ACTIVE MODE LOCKING; DISTRIBUTED BRAGG REFLECTORS; ELECTROABSORPTION MODULATOR; RIDGE WAVEGUIDES;

SEMICONDUCTOR LASERS;

EID: 17944394791     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. Transform-limited optical short-pulse generation at high repetition rate over 40 GHz from a monolithic passive mode-locked DBR laser diode
2. Locking bandwidth of actively mode-locked semiconductor lasers
3. Frequency range extension of actively mode-locked lasers integrated with electroabsorption modulators using chirped gratings