Dislocation structure and activated slip systems in β-Silicon nitride during high temperature deformation

Key Engineering Materials

Volumn 171-174, Issue , 2000, Pages 825-832

  Kawahara, K ^a   Tsurekawa, S ^a   Nakashima, H ^b  

^a TOHOKU UNIVERSITY   (Japan)

^b KYUSHU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL ACTIVATION; COMPACTION; CRACK PROPAGATION; CRYSTAL MICROSTRUCTURE; DEFORMATION; DISLOCATIONS (CRYSTALS); DUCTILITY; HIGH TEMPERATURE EFFECTS; STRAIN RATE; TRACE ANALYSIS; TRANSMISSION ELECTRON MICROSCOPY; VECTORS;

ACTIVATED SLIP SYSTEMS; BURGERS VECTOR ANALYSIS; HIGH TEMPERATURE DEFORMATION; WEAK BEAM METHOD;

SILICON NITRIDE;

EID: 17944393334     PISSN: 10139826     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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