Hydrogen as a deep impurity in semiconductors and its interaction with deep centers in III-V compounds

Defect and Diffusion Forum

Volumn 157-159, Issue , 1998, Pages 133-174

  Bonapasta, Aldo Amore ^a   Capizzi, Mario ^b  

^a CNR   (Italy)

^b SAPIENZA UNIVERSITY OF ROME   (Italy)

Author keywords

First principles defect calculations; Impurity passivation; Shallow and deep impurities

Indexed keywords

CALCULATIONS; DEFECTS; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; IMPURITIES; INDIUM PHOSPHIDE; PASSIVATION; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

DEEP CENTERS; DEEP IMPURITIES; DEFECT CALCULATIONS; DONOR AND ACCEPTOR; HYDROGEN COMPLEXES; III-V COMPOUNDS; NON-RADIATIVE RECOMBINATIONS; RELATIVE ORDER;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 17944388986     PISSN: 10120386     EISSN: 16629507     Source Type: Journal    
DOI: 10.4028/www.scientific.net/ddf.157-159.133     Document Type: Article

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