X-ray absorption near-edge fine structure study of AlInN semiconductors

Applied Physics Letters

Volumn 86, Issue 11, 2005, Pages 1-3

  Guo, Qixin ^a   Ding, Jian ^a   Tanaka, Tooru ^a   Nishio, Mitsuhiro ^a   Ogawa, Hiroshi ^a  

^a SAGA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; COMPOSITION; CURVE FITTING; ELECTRONIC STRUCTURE; ENERGY GAP; LIGHT SCATTERING; MOLECULAR BEAM EPITAXY; X RAY ANALYSIS;

MULTIPLE-SCATTERING THEORY; REACTIVE RADIO-FREQUENCY MAGNETRON SPUTTERING; SPECTRAL STRUCTURES; X-RAY ABSORPTION NEAR-EDGE FINE STRUCTURE (XANES);

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 17944374327     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1886914     Document Type: Article

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