The effects of the ageing on the characteristic parameters of polyaniline/p-type Si/Al structure

Applied Surface Science

Volumn 230, Issue 1-4, 2004, Pages 404-410

  Saglam M ^a   Biber, M ^a   Cakar M ^b   Turut A ^a  

^a ATATÜRK UNIVERSITY   (Turkey)

^b KAHRAMANMARAS SUTCU IMAM UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

AGING OF MATERIALS; BAND STRUCTURE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; ELECTROCHEMISTRY; INTERFACES (MATERIALS); SEMICONDUCTOR DIODES; SILICON; THERMAL EFFECTS; THERMIONIC EMISSION;

ANODIZATION PROCESS; INTERFACIAL LAYERS; POLYANILINE FILMS; SERIES RESISTANCE;

AROMATIC POLYMERS;

EID: 17744414399     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.03.003     Document Type: Article

References (30)

1. Laranjeira J.M.G., Khoury H.J., de Azevedo W.M., da Silva E.F. Jr., de Vasconcelos E.A. Appl. Surf. Sci. 7639:2002;1.
2. Fuchigami H., Tsumura A., Koezka H. Appl. Phys. Lett. 63:1993;1372.
3. Burroughes J.H., Bradley D.D.C., Brawn A.R., Marks R.N., Mackay V., Friend R.H., Burns P.L., Holmes A.B. Nature. 374:1990;539.
4. Abthagir P.S., Saraswathi R. J. Appl. Polymer Sc. 81:2001;2127.
5. Heeger A.J. Solid State Commun. 107:1998;673.
6. Yang Y., Heeger A.J. Nature. 372:1995;498.
7. Ellis D.L., Zakin M.R., Bernstein L.S., Rubner M.F. Anal. Chem. 68:1996;817.
8. Sharma N.C., Chopra K.L. Solid State Electron. 23:1980;869.
9. Halliday D.P., Gray J.W., Adams P.N., Monkman A.P. Synth. Metals. 102:1999;877.
10. Halliday D.P., Holland E.R., Eggleston J.M., Adams P.N., Cox S.E., Monkman A.P. Thin Solid Films. 276:1996;299.
11. Bandyopadhyay S., Bhattacharyya A., Sen S.K. J. Appl. Phys. 85:1999;3671.
12. Campos M., Bulhoes L.O.S., Lindino C.A. Sens. Actuators. 87:2000;67.
13. Onganer Y., Saglam M., Türüt A., Efeoglu H., Tüzemen S. Solid State Electron. 39:1996;677.
14. Tsutsumi H. Synth. Metals. 69:1995;143.
15. T. Matsunaga, H. Daifuku, T. Kawagoe, Nippon Kagaku Kaishi 1 (1990).
16. Lacroix J.C., Kanazawa K., Diaz A. J. Electrochem. Soc. 136:1989;1308.
17. E.H. Rhoederic, Metal-Semiconductor Contacts, Oxford University Press, 1978.
18. Cheung S.K., Cheung N.W. Appl. Phys. Lett. 49:1986;85.
19. Türüt A., Saglam M. Physica B. 179:1992;285.
20. Saglam M., Ayyildiz E., Gümüş A., Türüt A., Efeoglu H., Tuzemen S. Appl. Phys. A. 62:1996;269.
21. Türüt A., Köleli F. J. Appl. Phys. 72:1992;818.
22. Türüt A., Yalçin N., Saglam M. Solid State Electron. 35:1992;835.
23. Lu X., Xu X., Wang N.Q., Zhang Q., Lin M.C. J. Phys. Chem. B. 105:2001;10069.
24. Jeszka J.K. Mater. Sci. Forum. 191:1995;141.
25. A.K. Sinha, B.C. Giessen, D.E. Polk, Treatise on Solid State Chemistry, Plenum, New York, 1976.
26. Çetinkara H.A., Saglam M., Türüt A., Yalçin N. Eur. Phys. J. AP. 6:1999;89.
27. Prasad K. Appl. Phys. A. 54:1992;493.
28. Turner M.J., Rhoderick E.H. Solid State Electron. 11:1968;291.
29. Hollinger G., Himpsel F.J. Phys. Rev. B. 28:1983;3651.
30. Card H.C., Rhoderick E.H. J. Phys. D. 4:1971;1589.