Dislocation mechanisms in the GaN lateral overgrowth by hydride vapor phase epitaxy

Materials Research Society Symposium - Proceedings

Volumn 595, Issue , 2000, Pages

  Kuan, T S ^a   Inoki, C K ^a   Hsu, Y ^a   Harris, D L ^a   Zhang, R ^a   Gu, S ^a   Kuech, T F ^a  

^a STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DISLOCATIONS (CRYSTALS); FINITE ELEMENT METHOD; GRAIN BOUNDARIES; HIGH TEMPERATURE EFFECTS; SEMICONDUCTOR GROWTH; STRESSES; TEMPERATURE; VAPOR PHASE EPITAXY;

LATERAL EPITAXIAL OVERGROWTH; THREADING DISLOCATION BENDS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 17744412909     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)