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Solid State Communications

Volumn 112, Issue 9, 1999, Pages 499-501

Landau levels of negatively charged excitons in GaAs/GaAlAs semiconductor quantum wells

(2) Moradi, A a Stebe B a

a UNIVERSITÉ DE LORRAINE (France)

Author keywords

[No Author keywords available]

Indexed keywords

EXCITONS; HETEROJUNCTIONS; NANOSTRUCTURED MATERIALS; OPTICAL PROPERTIES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

LANDAU LEVELS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 17744411422 PISSN: 00381098 EISSN: None Source Type: Journal
DOI: 10.1016/S0038-1098(99)00372-5 Document Type: Article

Times cited : (2)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.