TMAH/IPA anisotropic etching characteristics

Sensors and Actuators: A. Physical

Volumn 37-38, Issue C, 1993, Pages 737-743

  Merlos, A ^a   Acero, M ^a   Bao, M H ^a   Bausells, J ^a   Esteve, J ^a  

^a INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CHEMICAL VAPOR DEPOSITION; COMPOSITION EFFECTS; CRYSTAL GROWTH; CRYSTAL ORIENTATION; INTEGRATED CIRCUIT MANUFACTURE; MICROMACHINING; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON; SOLUTIONS; SURFACES;

ETCH RATES; ETCHING CHARACTERISTICS; ISOPROPYL ALCOHOL (IPA); LOW PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD); LOW TEMPERATURE DEPOSITED SILICON OXIDE (LTO); TETRAMETHYL AMMONIUM HYDROXIDE (TMAH);

ETCHING;

EID: 17744409087     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/0924-4247(93)80125-Z     Document Type: Article

References (11)

1. Anisotropic etching of silicon in hydrazine
2. The controlled etching of silicon in catalysed ethylenediamine-pyrocatechol-water solutions
3. Compensating corner undercutting of (100) silicon in KOH
4. 4OH-based etchants for silicon micromachining: influence of additives and stability of passivation layers
5. 4OH solutions
6. TMAHW etchants for silicon micromachining
7. Some new three level designs for the study of quantitative variables
8. Fabrication of non-underetched convex corners in anisotropic etching of (100)-silicon in aqueous KOH with respect to novel micromechanic elements
9. Mesa structure formation using potassium hydroxide and ethylene diamine based etchants