Erbium in SiOx environment: Ways to improve the 1.54 μm emission

Physica B: Condensed Matter

Volumn 308-310, Issue , 2001, Pages 344-347

  Kocher, G ^a   Przybylinska, H ^a,b   Stepikhova, M ^a,c   Palmetshofer, L ^a   Jantsch, W ^a  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^b INSTITUTE OF PHYSICS   (Poland)

^c INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

Author keywords

Electroluminescence, Precipitates; Erbium luminescence

Indexed keywords

DOPING (ADDITIVES); ELECTROLUMINESCENCE; ELECTRONS; ERBIUM; HALL EFFECT; SECONDARY ION MASS SPECTROMETRY; SILICA; TUNNEL DIODES;

AVALANCHE PROCESS; HOT ELECTRONS; SILICON DIODES;

SEMICONDUCTING SILICON;

EID: 17744405372     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(01)00695-0     Document Type: Article

References (12)