Deformation induced defects in GaAs - the role of dislocations

Materials Science Forum

Volumn 255-257, Issue , 1997, Pages 497-499

  Huebner, C G ^a   Leipner, H S ^a   Krause Rehberg, R ^a  

^a MARTIN LUTHER UNIVERSITY HALLE WITTENBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTALLINE MATERIALS; DEFORMATION; DISLOCATIONS (CRYSTALS); POINT DEFECTS; SINGLE CRYSTALS; STRAIN RATE;

POSITRON LIFETIME SPECTROSCOPY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 17744404686     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (9)