Radiation hardness and lifetime of VCSELs and PIN photodiodes for use in the ATLAS SCT

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4134, Issue 1, 2000, Pages 206-213

  Mahout, G ^a   Charlton, D G ^a   Dowell, J D ^a   Gregor, I M ^c   Homer, R J ^a   Jovanovic, P ^a   Kootz, A ^b,c   Nickerson, R B ^b   Wastie, R ^b   Weidberg, A R ^b  

^a UNIVERSITY OF BIRMINGHAM   (United Kingdom)

^b UNIVERSITY OF OXFORD   (United Kingdom)

^c UNIVERSITY OF WUPPERTAL   (Germany)

Author keywords

ATLAS; CSEL; Epitaxial Si PIN photodiode; LHC; Lifetime; Radiation damage; SCT

Indexed keywords

EPITAXIAL GROWTH; IONIZING RADIATION; NEUTRON IRRADIATION; PHOTODETECTORS; PHOTODIODES; RADIATION DAMAGE; RADIATION HARDENING;

LARGE HARDON COLLIDER (LHC); SEMICONDUCTOR TRACKER (SCT); VERTICAL CAVITY SURFACE EMITTING LASER DIODES (VCSELS);

SEMICONDUCTOR LASERS;

EID: 17744400690     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.405345     Document Type: Article

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