Thermal profile evaluation of a silicon wafer in the apparatus for Rapid Thermal Chemical vapour Deposition

Journal of Optoelectronics and Advanced Materials

Volumn 7, Issue 2, 2005, Pages 665-670

  Girtan, M ^a   Logerais, P O ^b   Avril, L ^b   Gonzzatti, F ^c   Bouteville, A ^b  

^a ALEXANDRU IOAN CUZA UNIVERSITY OF IASI   (Romania)

^b Arts et Metiers ParisTech   (France)

^c Qualiflow   (France)

Author keywords

Computer simulation; Discrete ordinate method; Heat transfer; Monte Carlo method; RTCVD

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; HEAT TRANSFER; MONTE CARLO METHODS; SUBSTRATES; THERMAL EFFECTS; THICKNESS MEASUREMENT; THIN FILMS;

DISCRETE ORDINATE METHOD; HEAT SOURCES; RAPID THERMAL PROCESSING (RTP); RTCVD;

SILICON WAFERS;

EID: 17744399717     PISSN: 14544164     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

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