Photoelectrical properties of heterojunctions connected with Van-der-Waals forces

Journal of Optoelectronics and Advanced Materials

Volumn 7, Issue 2, 2005, Pages 903-906

  Kovalyuk, Z D ^a   Katerynchuk, V M ^a   Sydor, O M ^a  

^a FRANTSEVICH INSTITUTE FOR PROBLEMS OF MATERIALS SCIENCE   (Ukraine)

Author keywords

InSe; Intrinsic oxide; Photoelectrical properties; Phototransistor

Indexed keywords

CHEMICAL BONDS; CRYSTALS; ELECTRIC SIGNAL SYSTEMS; PHOTOCURRENTS; PHOTOELECTRICITY; PHOTOTRANSISTORS; SEMICONDUCTING INDIUM COMPOUNDS; VAN DER WAALS FORCES;

INSE; INTRINSIC OXIDE; PHOTOCURRENT DENSITY; PHOTOELECTRIC PROPERTIES;

HETEROJUNCTIONS;

EID: 17744383375     PISSN: 14544164     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

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