Electrical properties of ZnSe crystals doped with transition metals

Journal of Optoelectronics and Advanced Materials

Volumn 7, Issue 2, 2005, Pages 733-737

  Avdonin, A N ^a   Kolibaba, G V ^a   Nedeoglo, D D ^a   Nedeoglo, N D ^a   Sirkeli, V P ^a  

^a MOLDOVA STATE UNIVERSITY   (Moldova)

Author keywords

Amphoteric impurity; Charge state; Hall effect

Indexed keywords

DOPING (ADDITIVES); ELECTRIC CHARGE; ELECTRIC PROPERTIES; GOLD; HALL EFFECT; SEMICONDUCTOR MATERIALS; SILVER; SINGLE CRYSTALS; THERMAL EFFECTS; TRANSITION METALS;

AMPHOTERIC IMPURITIES; CHARGE STATES; HALL COEFFICIENTS; INTERATOMIC DISTANCE;

ZINC COMPOUNDS;

EID: 17744376958     PISSN: 14544164     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

References (11)

1. P. J. Dean, B. J. Fitzpatrick, R. N. Bhargava, Phys. Rev. B 26, 2016 (1982).
2. G. B. Stringfellow, R. H. Bube, Phys. Rev. 171, 903 (1968).
3. P. O. Holte, B. Monemar, H. J. Łożykowski, Phys. Rev. B 32, 986 (1985).
4. V. A. Kasiyan, D. D. Nedeoglo, N. D. Nedeoglo, phys. stat. sol. (b) 178, 721 (2000).
5. M. Godlewski, W. E. Lamb, B. C. Cavanett, Sol. St. Commun. 39, 595 (1981).
6. N. R. J. Poolton, J. J. Davies, J. E. Nicholls, B. J. Fitzpatrick, J. Cryst. Growth 72, 336 (1985).
7. N. R. J. Poolton, J. J. Davies, J. E. Nicholls, B. J. Fitzpatrick, J. Phys. C: Solid State Phys. 20, 3553 (1987).
8. A. N. Avdonin, G. N. Ivanova, G. V. Kolibaba, D. D. Nedeoglo, N. D. Nedeoglo, J. Optoelectron. Adv. Mater. 7(2), 841 (2005).
9. G. N. Ivanova, V. A. Kasiyan, D. D. Nedeoglo, S. V. Oprea, Fiz. Tekh. Poluprov. 32, 171 (1998) (in Russian).
10. E. V. Kuchis, Galvanomagnitnye effecty i metody ikh issledovaniya, Izd. Radio i Svyazi, Moscow 1990 (in Russian).
11. V. Z. Bolboshenko, G. N. Ivanova, I. Kalmykova, V. A. Kasiyan, D. D. Nedeoglo, B. V. Novikov, Sov. Fiz. Tekh. Pol. 24, 1929 (1990) (in Russian).