Broadband High-Efficiency Monolithic InGaP/GaAs HBT Power Amplifiers for Wireless Applications

International Journal of RF and Microwave Computer-Aided Engineering

Volumn 13, Issue 6, 2003, Pages 496-510

  Jäger, Herbert ^a   Grebennikov, Andrei ^a   Heaney, Eugene ^a   Weigel, Robert ^b  

^a M/A COM   (United States)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

Broadband operation; InGaP GaAs HBT transistor; Parallel circuit class E mode; Power amplifier; Reactance compensation

Indexed keywords

CODE DIVISION MULTIPLE ACCESS; HETEROJUNCTION BIPOLAR TRANSISTORS; WIRELESS TELECOMMUNICATION SYSTEMS;

REACTANCE COMPENSATION;

POWER AMPLIFIERS;

EID: 17644440096     PISSN: 10964290     EISSN: None     Source Type: Journal    
DOI: 10.1002/mmce.10107     Document Type: Article

References (12)

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