Thin oxynitride solution for digital and mixed-signal 65nm CMOS platform

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2003, Pages 643-646

  Tavel, B ^a   Bidaud, M ^a   Emonet, N ^b   Barge, D ^a   Planes, N ^b   Brut, H ^b   Roy, D ^b   Vildeuil, J C ^b   Difrenza, R ^b   Rochereau, K ^a   Denais, M ^b   Huard, V ^a   Llinares, P ^b   Bruyere S ^b   Parthasarthy, C ^b   Revil, N ^b   Pantel, R ^b   Guyader, F ^b   Vishnubotla, L ^c   Barla, K ^b   Arnaud, F ^b   Stolk, P ^a   Woo, M ^c   more..

^a NXP SEMICONDUCTORS   (Netherlands)

^b STMICROELECTRONICS   (France)

^c MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE MEASUREMENT; DIELECTRIC DEVICES; LEAKAGE CURRENTS; NITROGEN OXIDES; SIGNAL PROCESSING; TRANSISTORS; VOLTAGE MEASUREMENT;

GATE DIELECTRICS; POWER CONSUMPTION;

CMOS INTEGRATED CIRCUITS;

EID: 17644439590     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. C.Hobbs et.al, VLSI'03
2. S. Tsujikawa et al., VLSI'02
3. S.Inaba et al., EDM'02
4. C.C.Chen et al.,VLSI'03
5. P.A.Kraus et al., VLSI'03
6. F.Arnaud et al., VLSI'03
7. H.Tuinhout, ESSDERC'02