Semiconductor-metal transition in liquid arsenic chalcogenides by ab initio molecular-dynamics simulations

Journal of Non-Crystalline Solids

Volumn 312-314, Issue , 2002, Pages 349-355

  Shimojo, Fuyuki ^a   Munejiri, Shuji ^b   Hoshino, Kozo ^a   Zempo, Y ^c  

^a HIROSHIMA UNIVERSITY   (Japan)

^b JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

^c SUMITOMO CHEMICAL CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC COMPOUNDS; COMPUTER SIMULATION; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; HIGH TEMPERATURE EFFECTS; METALLIZING; MOLECULAR DYNAMICS; PHASE TRANSITIONS; PRESSURE EFFECTS;

CHALCOGENIDES; SEMICONDUCTOR-METAL TRANSITIONS;

SEMICONDUCTING LIQUIDS;

EID: 17644429771     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(02)01718-0     Document Type: Article

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