Investigation about the high-temperature impact-ionization coefficient in silicon

ESSCIRC 2004 - Proceedings of the 34th European Solid-State Device Research Conference

Volumn , Issue , 2004, Pages 245-248

  Reggiani, S ^a   Rudan, M ^a   Gnani, E ^a   Baccarani, G ^a  

^a UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; COMPUTER SIMULATION; CURRENT DENSITY; HIGH TEMPERATURE EFFECTS; IMPACT IONIZATION; MATHEMATICAL MODELS; PHONONS;

AUGER EVENTS; ELECTROSTATIC DISCHARGES (ESD); FIRST PRINCIPLE CALCULATIONS; HIGH TEMPERATURE IMPACT IONIZATION;

SEMICONDUCTING SILICON;

EID: 17644408750     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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