Spectral shape analysis of infrared absorption of thermally grown silicon dioxide films

Applied Surface Science

Volumn 117-118, Issue , 1997, Pages 216-220

  Yasuda, Naoki ^a   Takagi, Shin Ichi ^a   Toriumi, Akira ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Bond angle; Central force model; Dielectric function; Gate oxide; Infrared absorption spectroscopy; MOSFET; Multiple reflection; Silicon dioxide; SiO 2; Spatial distribution; Thermally grown oxide

Indexed keywords

ABSORPTION SPECTROSCOPY; CHEMICAL BONDS; CRYSTAL LATTICES; FILM GROWTH; INFRARED SPECTROSCOPY; INTERFACES (MATERIALS); MOSFET DEVICES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SILICA; SPECTRUM ANALYSIS;

CENTRAL FORCE MODEL; DIELECTRIC FUNCTIONS; LATTICE MISMATCH; MULTIPLE REFLECTION EFFECT; SPECTRAL SHAPE ANALYSIS;

SEMICONDUCTING FILMS;

EID: 17544389273     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)80082-7     Document Type: Article

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