The effect of interface engineering and wave function localisation on optical response in imperfect type I and type II quantum well structures

Solid State Phenomena

Volumn 47-48, Issue , 1996, Pages 491-496

  Shaw, M J ^a   Briddon, P R ^a   Jaros, M ^a  

^a NEWCASTLE UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; CALCULATIONS; DEFECTS; ENERGY GAP; III-V SEMICONDUCTORS; INDIUM ANTIMONIDES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM WELLS; WAVE FUNCTIONS;

AB INITIO PSEUDOPOTENTIAL CALCULATIONS; INTERFACE ENGINEERING; LOCALISATION; LOCALISED; LOCALISED STATE; OPTICAL RESPONSE; TYPE-II QUANTUM WELLS; VALENCE STATE;

INTERFACE STATES;

EID: 17544379136     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Article

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