An analysis of residual strain in dry etched semiconductor nanostructures

Solid State Phenomena

Volumn 47-48, Issue , 1996, Pages 613-618

  Tang, Y S ^a   Sotomayor Torres, C M ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CADMIUM TELLURIDE; DEFECTS; ETCHING; GALLIUM ARSENIDE; II-VI SEMICONDUCTORS; III-V SEMICONDUCTORS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM WIRES;

ETCHED NANOSTRUCTURES; ETCHING CONDITION; NANO-METER SCALE; PHOTOLUMINESCENCE AND RAMAN SPECTROSCOPY; PHOTOREFLECTANCE; SEMICONDUCTOR NANOSTRUCTURES; STRAIN CHARACTERISTICS; THERMAL-ANNEALING;

NANOSTRUCTURES;

EID: 17544375092     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Article

References (22)

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2. Rahman, M. et al: Appl. Phys. Lett., 1992, 61, 2335.
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6. Tang, Y.S. et al: Superlatt. Microstruct., 1992, 12, 535; see also Solid State Commun., 1993, 85, 199; 86, 129.
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17. Tang, Y.S.: unpublished results.
18. Tang, Y.S. et al: "Quantum confinement in CdTe/CdMnTe quantum dots" submitted for publication.
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22. For example, Lockwood, D.J. et al: Phys. Rev. B, 1992, 45, 8565.