Shunts in n+p-junction solar cells fabricated on multicrystalline cast silicon

Solid State Phenomena

Volumn 51-52, Issue , 1996, Pages 497-502

  Voigt, A ^a   Hassler C ^a,b   Karg, D ^a   Strunk, H P ^a   Pensl, G ^a   Schulz, M ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b BAYER AG   (Germany)

Author keywords

Cast Silicon; Diode Characteristics; Grain Boundaries; Mesa Diodes; Shunts

Indexed keywords

EID: 17544374848     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/ssp.51-52.497     Document Type: Article

References (4)

1. A. Simo, S. Martinuzzi and J. P. David, in the Proc. of the 21st IEEE photovoltaic Specialists Conference (IEEE, New York 1900, 1990) p 800.
2. H. El Ghitani and M. Pasquinelli, J. Phys. III France 3, 1931 (1993).
3. A. Voigt and H. P. Skunk, Mater. Sci Eng. B24, 74 (1994).
4. D. Karg, C. Hässler, G. Pensl and M. Schulz, this conference.