Determination of subgap-absorption in μc-Si:H films by CPM

Solid State Phenomena

Volumn 47-48, Issue , 1996, Pages 607-612

  Krankenhagen, R ^a   Schmidt, M ^a   Henrion, W ^a   Sieber, I ^a   Koynov, S ^b   Grebner, S ^b   Schwarz, R ^b  

^a HMI   (Germany)

^b TECHNICAL UNIVERSITY OF MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; MICROCRYSTALLINE SILICON; SEMICONDUCTOR DEVICE MANUFACTURE;

A-SI:H; ABSORPTION CO-EFFICIENT; ABSORPTION PEAKS; BASIC CONDITIONS; STRUCTURAL INVESTIGATION; THREE-LAYER MODELS;

SILICON COMPOUNDS;

EID: 17544372865     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Article

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6. to be published
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